MP4504
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Industrial Applications Unit: mm
- -
- -
Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 5 W (Ta = 25°C) High collector current: IC (DC) =
- 5 A (max) High DC current gain: h FE = 2000 (min) (VCE =
- 5 V, IC =
- 3 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25°C PT Tc = 25°C VIsol Tj Tstg 25 1000 150
- 55 to 150 V °C °C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating
- 100
- 100
- 6
- 5
- 8
- 0.5 3.0 5.0 W Unit V V V A A W
JEDEC JEITA...
