MP4506
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TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One)
High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
Industrial Applications Unit: mm
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Package with heat sink isolated to lead (SIP 12 pins) High collector power dissipation (4-device operation) : PT = 5 W (Ta = 25°C) High collector current: IC (DC) = 5 A (max) High DC current gain: h FE = 1000 (min) (VCE = 3 V, IC = 3 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Isolation voltage Junction temperature Storage temperature range Ta = 25°C Tc = 25°C PT VIsol Tj Tstg DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 100 5 5 8 0.1 3.0 5.0 W 25 1000 150
- 55 to 150 V °C °C Unit V V V A A W
JEDEC JEITA...