MP4503
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Industrial Applications Unit: mm
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Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 5 W (Ta = 25°C) High collector current: IC (DC) = ±4 A (max) High DC current gain: h FE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25°C Tc = 25°C PT VIsol Tj Tstg DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 80 5 4 6 0.4 3.0 5.0 W 25 1000 150
- 55 to 150 V °C °C PNP
- 100
- 80
- 5
- 4
- 6
- 0.4 Unit V...
