Datasheet Summary
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit in mm
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- The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement- mode Low saturation voltage : VCE(sat) = 4.0V (max.) (IC = 20A) High speed: tf = 0.35µs (max.) (IC = 20A) trr = 0.15µs (max.) (IF = 20A)
JEDEC EIAJ TOSHIBA Weight: 44g
― ― 2- 78A1A
Equivalent Circuit
2002-09-25
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 20 40 20 40 60 150 -40~125 2500 (AC 1 minute) 1.5 Unit V V...