Datasheet Summary
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
- The electrodes are isolated from case.
- 6 IGBTs are 6 free wheeling diodes are built into
1 package.
- Enhancement-mode
- High speed : tf = 0.35 µs (max) (IC = 25 A)
: trr = 0.15 µs (max) (IF = 25 A)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1 ms
Forward current
DC 1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Symbol
VCES VGES
IC ICP IF IFM
Tj Tstg
VIsol
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JEDEC JEITA TOSHIBA Weight: 44 g...