Datasheet4U Logo Datasheet4U.com

MT3S106FS - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Datasheet Summary

Features

  • Low Noise Figure :NF=1.2dB (@f=2GHz).
  • High Gain:|S21e|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1).

📥 Download Datasheet

Datasheet preview – MT3S106FS

Datasheet Details

Part number MT3S106FS
Manufacturer Toshiba Semiconductor
File Size 138.84 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S106FS Datasheet
Additional preview pages of the MT3S106FS datasheet.

📁 Similar Datasheet

  • MT3S20P - Silicon NPN Epitaxial Planar Type Transistor (Toshiba)
  • MT3S20TU - Silicon NPN Epitaxial Planar Type Transistor (Toshiba)
  • MT30033S - 30V 100A N-Channel Power MOSFET (MT Semiconductor)
  • MT3004 - N-Channel MOSFET (MT Semiconductor)
  • MT30046S - 30V 90A N-Channel Power MOSFET (MT Semiconductor)
  • MT30058S - 30V 70A N-Channel Power MOSFET (MT Semiconductor)
  • MT3005S - 30V 95A N-Channel Power MOSFET (MT Semiconductor)
  • MT301 - P-Channel Power MOSFET (MOS-TECH)
  • MT30210 - Photo triac coupler (Marktech Optoelectronics)
  • MT30310 - Photo Triac Coupler (Marktech Optoelectronics)
Other Datasheets by Toshiba Semiconductor
  • MT3S107FS - Silicon-Germanium NPN Epitaxial Planar Type Transistor
  • MT3S108FS - Silicon-Germanium NPN Epitaxial Planar Type Transistor
  • MT3S111 - Silicon-Germanium NPN Epitaxial Planar Type Transistor
  • MT3S111P - Silicon-Germanium NPN Epitaxial Planar Type Transistor
  • MT3S111TU - Silicon-Germanium NPN Epitaxial Planar Type Transistor
  • MT3S113 - Silicon-Germanium NPN Epitaxial Planar Type Transistor
  • MT3S113P - Silicon-Germanium NPN Epitaxial Planar Type Transistor
  • MT3S113TU - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Full PDF Text Transcription

Click to expand full text
MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=1.2dB (@f=2GHz) • High Gain:|S21e|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 13 6 1 80 20 100 150 −55~150 Unit V V V mA mA mW °C °C 1.BASE 2.EM IT TER 3.COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.
Published: |