MT3S106FS
Key Features
- Low Noise Figure :NF=1.2dB (@f=2GHz)
- High Gain:|S21e|2=10dB (@f=2GHz)
- Part: MT3S106FS
- Description: Silicon-Germanium NPN Epitaxial Planar Type Transistor
- Category: Transistor
- Manufacturer: Toshiba
- Size: 138.84 KB