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MT3S108FS - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Key Features

  • Low Noise Figure :NF=0.9dB (@f=2GHz).
  • High Gain:|S21e|2=11.5dB (@f=2GHz) Marking 3 43 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note.

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Datasheet Details

Part number MT3S108FS
Manufacturer Toshiba
File Size 84.60 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S108FS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=0.9dB (@f=2GHz) • High Gain:|S21e|2=11.5dB (@f=2GHz) Marking 3 43 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 10 4.5 1.5 25 12.5 100 150 −55~150 Unit V V V mA mA mW °C °C 1.BASE 2.EM IT TER 3.COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.