RN1241 Datasheet | Toshiba

RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1241,RN1242,RN1243,RN1244 For Muting and Switching Applications l High emitter-base voltage : VEBO = 25v (min) l High reverse hfe : reverse h FE = 150 (typ.) (VCE = - 2V, IC = - 4ma) l Low on resistance : RON = 1Ω (typ.) (IB = 5m A) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit: mm Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 0.13g ― ― 2-4E1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 20 25 300 300 150 - 55~150 Unit V V V m A m W °C °C 2001-06-07 RN1241~RN1244 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance RN1241 Input resistor RN1242 RN1243 RN1244 R1 Symbol ICBO IEBO h FE (Note) VCE (sat) f T Cob Test Circuit ― ― ― ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4m A IC = 30m A, IB = 3m A VCE = 6V, IC = 4m A VCB = 10V, IE = 0, f = 1MHz Min ― ― 200 ― ― ― 3.9 7 Typ. ― ― ― ― 30 4.8 5.6 10 22 2.2 Max 0.1 0.1 1200 0.1 ― ― 7.3 13 28.6 2.86 kΩ Unit µA µA ― V MHz p F ― 15.4 1.54 Note: h EE Classification A: 200~700 B: 350~1200 2001-06-07 RN1241~RN1244 RESTRICTIONS ON PRODUCT USE 000707EAA - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to ply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a...