RN1242 Overview
RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1241,RN1242,RN1243,RN1244 For Muting and Switching Applications l High emitter-base voltage : VEBO = 25v (min) l High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma) l Low on resistance.
RN1242 Key Features
- High emitter-base voltage : VEBO = 25v (min)
- High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)
- Low on resistance : RON = 1Ω (typ.) (IB = 5mA)
- With built-in bias resistors
- Simplify circuit design
- Reduce a quantity of parts and manufacturing process Unit: mm Equivalent Circuit JEDEC EIAJ TOSHIBA Weight