RN2108F Datasheet | Toshiba

RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l plementary to RN1107F~RN1109F Unit in mm Equivalent Circuit and Bias Resister Values Type No. RN2107F RN2108F RN2109F R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 2.3 mg Symbol RN2107F ~RN2109F RN2107F Emitter-base voltage RN2108F RN2109F Collector current Collector power dissipation Junction temperature Storage temperature range RN2107F ~RN2109F IC PC Tj Tstg VEBO VCBO VCEO...