RN2109F Datasheet | Toshiba

RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l plementary to RN1107F~RN1109F Unit in mm Equivalent Circuit and Bias Resister Values Type No. RN2107F RN2108F RN2109F R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 2.3 mg Symbol RN2107F ~RN2109F RN2107F Emitter-base voltage RN2108F RN2109F Collector current Collector power dissipation Junction temperature Storage temperature range RN2107F ~RN2109F IC PC Tj Tstg VEBO VCBO VCEO Rating - 50 - 50 - 6 - 7 - 15 - 100 100 150 - 55~150 m A m W °C °C V Unit V V ― ― 2-2HA1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage 000707EAA1 - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to ply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. - The TOSHIBA products listed in this document are intended for usage in general electronics applications (puter, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,...