SM8J45 Datasheet | Toshiba

SM8G45, SM8J45, SM8G45A, SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS Repetitive Peak Off- State Voltage: VDRM = 400V, 600V R.M.S On- State Current: IT (RMS) = 8A High mutating (dv / dt) Unit: mm MAXIMUM RATINGS .. CHARACTERISTIC SM8G45 SM8G45A SM8J45 SM8J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg UNIT Repetitive Peak Off- State Voltage R.M.S On- State Current (Full Sine Waveform Tc = 105°C) Peak One Cycle Surge On- State Current (Non- Repetitive) I t Limit Value Critical Rate of Rise of On- State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 8 80 (50Hz) 88 (60Hz) 32 50 5 0.5 10 2 - 40~125 - 40~125 A A A s A / µs W W V A °C °C JEDEC JEITA TOSHIBA TO-220AB ― 13-10G1A Weight: 2.0 g (typ.) 2004-07-06 SM8G45, SM8J45, SM8G45A, SM8J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I SM8G45 SM8J45 Gate Trigger Voltage SM8G45A SM8J45A II III IV I II III IV I SM8G45 SM8J45 Gate Trigger Current SM8G45A SM8J45A II III IV I II III IV Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off- State Voltage at mutation SM8G45 SM8J45 SM8G45A SM8J45A VTM VGD IH Rth (j- c) ITM = 12A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 400V, (di / dt) c = - 4.5A / ms Tj = 125°C IGT VD = 12V RL = 20Ω VGT VD = 12V RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated, Tj = 125°C T2 (+), Gate (+) T2 (+), Gate (- ) T2 (- ), Gate (- ) T2 (- ), Gate (+) T2 (+), Gate (+) T2 (+), Gate (- ) T2 (- ), Gate (- ) T2 (- ), Gate (+) T2 (+), Gate (+) T2 (+), Gate (- ) T2 (- ), Gate (- ) T2 (- ), Gate (+) T2 (+), Gate (+) T2 (+), Gate (- ) T2 (- ), Gate (- ) T2 (- ), Gate (+) MIN ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.2 ― ― 10 4 TYP. ― ― ― ― ― ―...