SM8J48A Datasheet | Toshiba

SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G48,USM8G48,SM8J48,USM8J48 SM8G48A,USM8G48A,SM8J48A,USM8J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage l R.M.S On- State Current l Gate Trigger Current : IGT = 30m A Max. : IGT = 20m A Max. (“A”Type) .. : VDRM = 400, 600V : IT (RMS) = 8A Unit: mm SM8G48, SM8J48, SM8G48A, SM8J48A USM8G48, USM8J48, USM8G48A, USM8J48A JEDEC JEITA TOSHIBA ― ― 13-10J1A JEDEC JEITA TOSHIBA ― ― 13-10J2A Weight: 1.7g MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage (U)SM8G48 (U)SM8G48A (U)SM8J48 (U)SM8J48A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg UNIT V 8 80 (50Hz) 88 (60Hz) 32 50 5 0.5 10 2 - 40~125 - 40~125 A A A s A / µs W W V A °C °C R.M.S On- State Current Peak One Cycle Surge On- State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On- State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Note 1: VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 2001-07-10 SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III IV I (U)SM8G48 (U)SM8J48 .. SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+), Gate (+) MIN ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.2 ― ― ― ― 10 4 TYP. ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― 300 200 ― ― MAX 20 1.5 1.5 1.5 ― 30 30 30 ― 20 20 20 ― 1.5 ― 50 2.8...