Toshiba Field Effect Transistor Silicon N Channel Mos Type
| Part number | SSM3K02F |
|---|---|
| Manufacturer | Toshiba |
| File Size | 157.00 KB |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| Datasheet | SSM3K02F_ToshibaSemiconductor.pdf |
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SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications · · · Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage:.
| Part Number | Description |
|---|---|
| SSM3K02T | High Speed Switching Applications |
| SSM3K01F | Silicon N-Channel MOSFET |
| SSM3K01T | Silicon N-Channel MOSFET |
| SSM3K03FE | Silicon N-Channel MOS Type FET |
| SSM3K03FV | High Speed Switching Applications |
| SSM3K03TE | High Speed Switching Applications |
| SSM3K04FE | High Speed Switching Applications |
| SSM3K04FS | Silicon N-Channel MOSFET |
| SSM3K04FU | High Speed Switching Applications |
| SSM3K04FV | High Speed Switching Applications |
