SSM3K02F - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K02F
Manufacturer	Toshiba Semiconductor
File Size	157.00 KB
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Datasheet	SSM3K02F Datasheet
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SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications · · · Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD Tch Tstg Rating 30 ±10 1.0 A 2.0 200 150 -55~150 mW °C °C Unit V V JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1F Weight: 0.012 g (typ.

Published: Sep 28, 2005 |