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SSM3K02F
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02F
High Speed Switching Applications
· · · Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD Tch Tstg Rating 30 ±10 1.0 A 2.0 200 150 -55~150 mW °C °C Unit V V
JEDEC JEITA TOSHIBA
TO-236MOD SC-59 2-3F1F
Weight: 0.012 g (typ.
SSM3K02F Datasheet
