Full PDF Text Transcription for SSM3K12T (Reference)
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SSM3K12T. For precise diagrams, and layout, please refer to the original PDF.
SSM3K12T CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category SSM3K12T DC-DC Converter High Speed Switching Applications · · · Small Package Low ON...
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Converter High Speed Switching Applications · · · Small Package Low ON-resistance High speed Unit: mm : Ron = 95 mΩ (max) (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V) : ton = 21 ns : toff = 16 ns Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 ±20 3.0 6.0 0.7 1.25 150 -55~150 Unit V V A W °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-3S1A Note 1: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm ) Note 2: T
SSM3K12T Datasheet
