SSM3K14T Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) DC-DC Converter High Speed Switching Applications - - - Small Package Low ON-resistance: Ron = 39 mΩ (max) (@VGS = 10 V) : Ron = 57 mΩ (max) (@VGS = 4.5 V) High speed: ton = 24 ns (typ.) : toff = 19 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 ±20 4.0 8.0 0.7 1.25 150 -55~150 Unit V V A Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range W °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1A Note 1: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature. Weight: 10 mg (typ.) Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that e into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. 2002-01-24 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| Test Condition VGS = ±16 V, VDS = 0 ID = 1 m A, VGS = 0 ID = 1 m A, VGS = -20 V VDS = 30 V, VGS = 0 VDS = 5 V, ID = 0.1 m A VDS = 5 V, ID = 2 A ID = 2 A, VGS = 10 V Drain-Source ON resistance RDS (ON) ID = 2 A, VGS = 4.5 V ID = 2 A, VGS...