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SSM3K14T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
SSM3K14T
DC-DC Converter High Speed Switching Applications
· · · Small Package Low ON-resistance: Ron = 39 mΩ (max) (@VGS = 10 V) : Ron = 57 mΩ (max) (@VGS = 4.5 V) High speed: ton = 24 ns (typ.) : toff = 19 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 ±20 4.0 8.0 0.7 1.25 150 -55~150 Unit V V A
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
W °C °C
JEDEC JEITA TOSHIBA
― ― 2-3S1A
Note 1: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature.
SSM3K14T Datasheet
