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SSM3K7002F - Silicon N-Channel MOSFET

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Part number SSM3K7002F
Manufacturer Toshiba Semiconductor
File Size 205.77 KB
Description Silicon N-Channel MOSFET
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SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON-resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) +0.5 2.5-0.3 +0.25 1.5-0.15 1 2 3 +0.1 0.4-0.05 2.9±0.2 1.9 0.95 0.95 0.3 +0.1 0.16-0.06 Characteristics Symbol Rating Unit +0.2 1.1-0.1 Drain-source voltage VDS 60 V Gate-source voltage VGSS ± 20 V 0~0.1 Drain current DC Pulse ID 200 mA IDP 800 Drain power dissipation (Ta = 25°C) PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C S-MINI 1.Gate 2.Source 3.
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