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SSM3K7002FU - Silicon N-Channel MOSFET

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Part number SSM3K7002FU
Manufacturer Toshiba Semiconductor
File Size 204.44 KB
Description Silicon N-Channel MOSFET
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SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) Unit: mm 2.1± 0.1 1.25 ± 0.1 +0.1 0.3 - 0 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGSS ± 20 V Drain current DC Pulse ID 200 mA IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
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