SSM3K7002FU
SSM3K7002FU is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High Speed Switching Applications Analog Switch Applications
- Small package
- Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V)
: Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V)
Unit: mm 2.1± 0.1 1.25 ± 0.1
+0.1 0.3
- 0
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
VGSS
± 20
Drain current
DC Pulse
200 m A
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150 m W
Channel temperature
Tch
°C
Storage temperature range
Tstg
- 55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6mm2 ×...
