Full PDF Text Transcription for SSM6J08FU (Reference)
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SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resista...
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ement Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V) • Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±12 V Drain current DC ID −1.3 A Pulse IDP (Note 2) −2.6 Drain power dissipation PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temp
SSM6J08FU Datasheet
