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SSM6K411TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K411TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • 2.5-V drive Low ON-resistance：RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V)
0.65 0.65 2.1±0.1 1.7±0.1
Unit: mm
RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V)
2.0±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID (Note1) IDP(Note1) PD (Note2) t<10s Tch Tstg Rating 20 ±12 10 20 1 2 150 −55 to 150 Unit
2 3
5 4
V A
0.7±0.05
V
Power dissipation Channel temperature Storage temperature range
W °C °C
1,2,5,6 ： Drain
UF6
JEDEC
3 4
： Gate ： Source
―
Note: Using continuously under heavy loads (e.g.
SSM6K411TU Datasheet
