SSM6L40TU Datasheet | Toshiba

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications - - - N-ch: 4.0-V drive P-ch: 4.0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance 2.1±0.1 1.7±0.1 Unit: mm Q1 N-ch: Ron = 182 mΩ (max) (@VGS = 4 V) Ron = 122 mΩ (max) (@VGS = 10 V) Q2 P-ch: Ron = 403 mΩ (max) (@VGS = -4 V) Ron = 226 mΩ (max) (@VGS = -10 V) 0.65 0.65 2 3 5 4 Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 30 ±20 1.6 3.2 Unit V V A 0.7±0.05 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Q2...