SSM6L56FE Datasheet | Toshiba

Features (1) 1.5-V drive (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 m A) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 m A) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 m A) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 m A) Q2 P-channel: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 m A) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 m A) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V, ID = -200 m A) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V, ID = -100 m A) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V, ID = -10 m A) 3. Packaging and Internal Circuit ES6 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017-2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2019-05 2019-08-01 Rev.1.0 4. Absolute Maximum Ratings (Note) 4.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (pulsed) (Note 1) Note 1: Ensure that the channel temperature does not exceed 150 . VDSS VGSS ID IDP ±8 800 m A 4.2. Q2 Absolute Maximum Ratings (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current...