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SSM6L56FE - Silicon Dual-Channel MOSFET

Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA) Q2 P-channel: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 mA) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 mA) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V, ID = -200 mA) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V, ID = -100 mA) RDS(ON.

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Datasheet Details

Part number SSM6L56FE
Manufacturer Toshiba
File Size 373.47 KB
Description Silicon Dual-Channel MOSFET
Datasheet download datasheet SSM6L56FE Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon P-/N-Channel MOS SSM6L56FE 1. Applications • High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA) Q2 P-channel: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 mA) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 mA) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V, ID = -200 mA) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V, ID = -100 mA) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V, ID = -10 mA) 3.
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