SSM6L61NU Datasheet Silicon Dual-Channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon P-/N-Channel MOS SSM6L61NU 1. Applications • Power Management Switches • DC-DC Converters 2.

Datasheet Details

(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) Q2 P-channel: RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) 3. Packaging and Internal Circuit UDFN6 SSM6L61NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016 Toshiba Corporation 1 Start of commercial produ.