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SSM6N04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
· · · · With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55~150 Unit V V mA mW °C °C
Note: Total rating
JEDEC JEITA TOSHIBA
― ― 2-2J1C
Weight: 6.8 mg (typ.
SSM6N04FU Datasheet
