SSM6N09FU Description
SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm Small package Low Drain-Source ON resistance. Ron = 0.7 Ω (max) (@VGS = 10 V).
- Part: SSM6N09FU
- Manufacturer: Toshiba
- Size: 168.49 KB
Related Toshiba Datasheets
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