SSM6N09FU Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm • Small package • Low Drain-Source ON resistance. : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)
Datasheet Details
| Part number | SSM6N09FU |
|---|---|
| Manufacturer | Toshiba |
| File Size | 168.49 KB |
| Description | N-Channel MOSFET |
| Datasheet | SSM6N09FU_ToshibaSemiconductor.pdf |
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