TC5117400BSJ Overview
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5117400BSJ/BST to be packaged in a 26/24 pin plastic SOJ (300mil), and 26/24 pin plastic TSOP...
TC5117400BSJ Key Features
- 4,194,304 word by 4 bit organization
- Fast access time and cycle time
- Single power supply of 5V± 10% with a built-in VBB generator
- Low Power
- 605mW MAX. Operating
- (TC5117400BSJ/BST-60)
- 523mW MAX. Operating
- (TC5117400BSJ/BST-70)
- 5.5mW MAX. Standby
- Outputs unlatched at cycle end allows twodimensional chip selection