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TC5117400BSJ - DYNAMIC RAM

General Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits.

The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Key Features

  • include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features.
  • 4,194,304 word by 4 bit organization.
  • Fast access time and cycle time.
  • Single power supply of 5V± 10% with a built-in VBB generator.
  • Low Power - 605mW MAX. Operating - (TC5117400BSJ/BST-60) - 523mW MAX. Operating - (TC5117400BSJ/BST-70) - 5.5mW MAX. Standby.
  • Outputs unlatched at cycle end allows twodimen.

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Other Datasheets by Toshiba

Part Number Description
TC5117400BSJ-60 DRAM
TC5117400BSJ-70 DRAM
TC5117400BST DYNAMIC RAM
TC5117400BST-60 DRAM
TC5117400BST-70 DRAM

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com TOSHIBA TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5117400BSJ/BST to be packaged in a 26/24 pin plastic SOJ (300mil), and 26/24 pin plastic TSOP (300mil). The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.