TC5117400BST - DYNAMIC RAM

This page provides the datasheet information for the TC5117400BST, a member of the TC5117400BSJ DYNAMIC RAM family.

Product Overview

Toshiba Semiconductor

Datasheet Details

Part number	TC5117400BST
Manufacturer	Toshiba Semiconductor
File Size	1.10 MB
Description	DYNAMIC RAM
Datasheet	TC5117400BST Datasheet
Additional preview pages of the TC5117400BST datasheet.

TC5117400BST Product details

Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits.

The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Features

include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features.
4,194,304 word by 4 bit organization.
Fast access time and cycle time.
Single power supply of 5V± 10% with a built-in VBB generator.
Low Power - 605mW MAX. Operating - (TC5117400BSJ/BST-60) - 523mW MAX. Operating - (TC5117400BSJ/BST-70) - 5.5mW MAX. Standby.
Outputs unlatched at cycle end allows twodimen.

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Other Datasheets by Toshiba Semiconductor

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Published: Dec 20, 2006 |