TC55257APL-10 Datasheet | Toshiba

1fOSH~lBA MOS MEMORY PRODUCT 32,768 WORD X 8 BIT CMOS STATIC RAM SILICON GATE CMOS PRELIMINARY TC55257AP-l O/APL-l O/AP-12/APL-12 TC55257A~10/AF~10/A~12/AF~12 [QfSCR I PTI ON I The TC55257AP is 262,144 bit static random access memory organized as 32,768 words by 8 bits usIng OIOS technology, and operated trom a single 5V supply. Advanced circuit techniques provide both high speed and low power Features with a maximum operating current of 5mA/rnIz and minimum cycle time of 100nsi l20ns. Hhen CE is a logic<ll high, the device is pLlcecl in lmv pm'ler standby mode i.n T Ih Jrh standby current is 2~A typically. Tile TC55257AP h<lS two control inputs. Chip enable (CE) <lllow for device...