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TC55257P-10 - STATIC RAM

This page provides the datasheet information for the TC55257P-10, a member of the TC55257PL-85 STATIC RAM family.

Description

The TCSS257P is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply.

Features

  • with a operating current of 5mA/MHz(Typ. ) and minimum cycle time of 85ns. lfuen CE is a logical high, the device is placed in low power standby mode in which standby current is 2~A typically. The TCSS257P has two control inputs. Chip enable (CE) allow for device selection and data retention control, and an output enable input (OE) provides fast memory access. Thus the TCSS2S7P is suitable for use in various microprocessor.

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Datasheet Details

Part number TC55257P-10
Manufacturer Toshiba Semiconductor
File Size 250.08 KB
Description STATIC RAM
Datasheet download datasheet TC55257P-10 Datasheet
Additional preview pages of the TC55257P-10 datasheet.

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Full PDF Text Transcription

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32,768 WORD X 8 BIT CMOS STATIC RAM SILICON GATE CMOS TC55257 PL-S5, TC55257 P-l O/PL-l 0 TC55257 P-12/PL-12 IDESCRIPTION I The TCSS257P is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a operating current of 5mA/MHz(Typ.) and minimum cycle time of 85ns. lfuen CE is a logical high, the device is placed in low power standby mode in which standby current is 2~A typically. The TCSS257P has two control inputs. Chip enable (CE) allow for device selection and data retention control, and an output enable input (OE) provides fast memory access.
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