TC55257PL-10 Datasheet PDF (STATIC RAM) | Download Toshiba Semiconductor TC55257PL-10

TC55257PL-10 - STATIC RAM

This page provides the datasheet information for the TC55257PL-10, a member of the TC55257PL-85 STATIC RAM family.

Description

The TCSS257P is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply.

Features

with a operating current of 5mA/MHz(Typ. ) and minimum cycle time of 85ns. lfuen CE is a logical high, the device is placed in low power standby mode in which standby current is 2~A typically. The TCSS257P has two control inputs. Chip enable (CE) allow for device selection and data retention control, and an output enable input (OE) provides fast memory access. Thus the TCSS2S7P is suitable for use in various microprocessor.

Datasheet Details

Part number	TC55257PL-10
Manufacturer	Toshiba Semiconductor
File Size	250.08 KB
Description	STATIC RAM
Datasheet	TC55257PL-10 Datasheet
Additional preview pages of the TC55257PL-10 datasheet.

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Full PDF Text Transcription

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32,768 WORD X 8 BIT CMOS STATIC RAM SILICON GATE CMOS TC55257 PL-S5, TC55257 P-l O/PL-l 0 TC55257 P-12/PL-12 IDESCRIPTION I The TCSS257P is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a operating current of 5mA/MHz(Typ.) and minimum cycle time of 85ns. lfuen CE is a logical high, the device is placed in low power standby mode in which standby current is 2~A typically. The TCSS257P has two control inputs. Chip enable (CE) allow for device selection and data retention control, and an output enable input (OE) provides fast memory access.

Published: Jan 18, 2017 |