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TC55V4000ST-70 - 8-BIT STATIC RAM

General Description

The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply.

Key Features

  • Low-power dissipation Operating: 10.8 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Standby Current (maximum): 3.6 V 3.0 V 7 µA 5 µA.
  • Access Times (maximum): TC55V4000ST -70 Access Time CE Access Time OE Access Time -85 85 ns 85 ns 45 ns 70 ns 70 ns 35 ns.
  • Package: TSOP 32-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC55V4000ST-70,-85 www.DataSheet4U.com TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 0.5 µA standby current (at VDD = 3 V, Ta = 25°C) when chip enable ( CE ) is asserted high. There are two control inputs.