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TC55V4000ST-85 - 8-BIT STATIC RAM

Download the TC55V4000ST-85 datasheet PDF. This datasheet also covers the TC55V4000ST-70 variant, as both devices belong to the same 8-bit static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply.

Key Features

  • Low-power dissipation Operating: 10.8 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Standby Current (maximum): 3.6 V 3.0 V 7 µA 5 µA.
  • Access Times (maximum): TC55V4000ST -70 Access Time CE Access Time OE Access Time -85 85 ns 85 ns 45 ns 70 ns 70 ns 35 ns.
  • Package: TSOP 32-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55V4000ST-70_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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TC55V040ATR (TC55V040ATR/AFT) 8-Bit FULL CMOS SRAM Toshiba

Other Datasheets by Toshiba

Part Number Description
TC55V4000ST-70 8-BIT STATIC RAM
TC55V400AFT-55 16-BIT FULL CMOS STATIC RAM
TC55V400AFT-70 16-BIT FULL CMOS STATIC RAM
TC55V4326FF-133 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V4326FF-150 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC55V4000ST-70,-85 www.DataSheet4U.com TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 0.5 µA standby current (at VDD = 3 V, Ta = 25°C) when chip enable ( CE ) is asserted high. There are two control inputs.