TC55V4000ST-85 Description
The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 70 ns.
TC55V4000ST-85 Key Features
- Low-power dissipation Operating: 10.8 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features u
- Access Times (maximum)
- 85 85 ns 85 ns 45 ns
- Package: TSOP 32-P-0.50 (ST)
- = don't care H = logic high L = logic low
- Output Input High-Z High-Z
- MAXIMUM RATINGS
- 3.0 V when measured at a pulse width of 50ns