TC58DVG02A1FT00 Datasheet | Toshiba

.. TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M u 8 BITS) CMOS NAND E PROM DESCRIPTION The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u 32 pages). The TC58DVG02A1 is a serial-type memory device which utilizes the I/O pins for both...