TIM5964-35SLA-251
TIM5964-35SLA-251 is MICROWAVE POWER GaAs FET manufactured by Toshiba.
MICROWAVE POWER GaAs FET ..
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
Features
- LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level
- HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz
- HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz
- HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz
- BROAD BAND INTERNALLY MATCHED
- HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB pression Point Power Gain at 1dB pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB G1dB IDS1 ∆G VDS= 10V f = 5.9
- 6.75GHz CONDITION UNIT...
