TIM5964-35SLA-251 Description
MICROWAVE POWER GaAs FET .. MICROWAVE SEMICONDUCTOR TECHNICAL DATA.
TIM5964-35SLA-251 Key Features
- LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level
- HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz
- HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz
- HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz
- BROAD BAND INTERNALLY MATCHED
- HERMETICALLY SEALED PACKAGE
- 6.75GHz CONDITION UNIT MIN. TYP. MAX. dBm dB A dB % Two Tone Test Po=35.0dBm