Datasheet4U Logo Datasheet4U.com

TK10A60W5 - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) (4) Fast reverse recovery time: trr = 85 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed.

📥 Download Datasheet

Datasheet Details

Part number TK10A60W5
Manufacturer Toshiba
File Size 237.62 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK10A60W5 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK10A60W5 N-Channel MOSFET INCHANGE
TK10A60W N-Channel MOSFET INCHANGE
TK10A60D N-Channel MOSFET Toshiba
TK10A60D N-Channel MOSFET INCHANGE
TK10A60D5 Silicon N-Channel MOSFET Toshiba

Other Datasheets by Toshiba

Part Number Description
TK10A60W Silicon N-Channel MOSFET
TK10A60E MOSFETs
TK10A55D N-Channel MOSFET
TK10A80E Silicon N-Channel MOSFET
TK100A06N1 MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TK10A60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4.