Download TK10A60W Datasheet PDF
TK10A60W page 2
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Datasheet Summary

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A60W, ITK10A60W - Features - Low drain-source on-resistance: RDS(ON) = 0.38Ω - Easy to control Gate switching - Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.5 mA) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Switching Voltage Regulators -...