Datasheet Summary
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
- Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS
2013-02-13 Rev.2.0
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