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TK10A60D5 - Silicon N-Channel MOSFET

Key Features

  • (1) Fast reverse recovery time: trrf = 50 ns (typ. ), trr = 90 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ. ) (3) High forward transfer admittance: |Yfs| = 6.0 S (typ. ) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10A60D5 TO-220SIS 1: Gate 2: Drain 3: Source ©2017 Toshiba Electronic Devices & Storage Corporation 1 2017-09-05 Rev.3.0 TK10A60D5 4. Absolute.

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Datasheet Details

Part number TK10A60D5
Manufacturer Toshiba
File Size 298.67 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK10A60D5 Datasheet

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MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.) (3) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10A60D5 TO-220SIS 1: Gate 2: Drain 3: Source ©2017 Toshiba Electronic Devices & Storage Corporation 1 2017-09-05 Rev.3.0 TK10A60D5 4.