Datasheet Summary
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
- Switching Voltage Regulators
2. Features
(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.) (3) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TO-220SIS
1: Gate 2: Drain 3: Source
©2017 Toshiba Electronic Devices & Storage Corporation
2017-09-05 Rev.3.0
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