TK10A60D5 Datasheet and Specifications PDF

The TK10A60D5 is a N-Channel MOSFET.

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Part NumberTK10A60D5 Datasheet
ManufacturerInchange Semiconductor
Overview iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A60D5，ITK10A60D5 ·FEATURES ·Low drain-source on-resistance: RDS(on) = 0.8Ω (typ.) ·Enhancement mode: Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA.
*Low drain-source on-resistance: RDS(on) = 0.8Ω (typ.)
*Enhancement mode: Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
Part NumberTK10A60D5 Datasheet
DescriptionSilicon N-Channel MOSFET
ManufacturerToshiba
Overview MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source. (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.) (3) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V.

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