TK10E60W Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: TK10E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK10E60W 1. Applications • Switching Voltage Regulators 2.

Datasheet Details

Part number	TK10E60W
Manufacturer	Toshiba
File Size	251.04 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK10E60W-ToshibaSemiconductor.pdf

Key Features

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanc.

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Brand Logo	Part Number	Description	Manufacturer
	TK10E60W	N-Channel MOSFET	INCHANGE

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