• Part: TK12A60D
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 245.61 KB
TK12A60D Datasheet (PDF) Download
Toshiba
TK12A60D

Key Features

  • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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TK12A60D datasheet preview

Datasheets by Manufacturer

Part Number Manufacturer Description
TK12A60D Inchange Semiconductor N-Channel MOSFET
K12A65D Toshiba TK12A65D
TK12A65D Inchange Semiconductor N-Channel MOSFET