Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Switching Regulator Applications
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- - Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit:...
