- Part: TK12A60U
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Toshiba
- Size: 201.67 KB
Key Features
- Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
TK12A60D
|
Inchange Semiconductor |
N-Channel MOSFET |
|
K12A65D
|
Toshiba |
TK12A65D |
|
TK12A65D
|
Inchange Semiconductor |
N-Channel MOSFET |