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TK12X53D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK12X53D
Switching Regulator Applications
9.2 MAX.
Unit: mm
7.0 ± 0.2 4 0.8 MAX. 2.5 0.7 MAX. 9.2 MAX. 2.0 1.5 2.0 0.4 ± 0.1
• • • •
Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 525 ±30 12 48 150 378 12 15 150 −55 to 150 Unit V V A W mJ A mJ °C °C
1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.
TK12X53D Datasheet
