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TK16G60W - N-Channel MOSFET

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Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16G60W D2PAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-10 1 2013-12-25 Rev.3.0 TK16G60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source vo.

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Datasheet Details

Part number TK16G60W
Manufacturer Toshiba Semiconductor
File Size 244.94 KB
Description N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (DTMOS) TK16G60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16G60W D2PAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-10 1 2013-12-25 Rev.3.0 TK16G60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 15.8 A Drain current (pulsed) (Note 1) IDP 63.
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