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TK16G60W - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(on) ≤0.19Ω.
  • Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.79mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK16G60W

Datasheet Details

Part number TK16G60W
Manufacturer INCHANGE
File Size 261.00 KB
Description N-Channel MOSFET
Datasheet download datasheet TK16G60W Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor TK16G60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.19Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.79mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 15.8 A IDM Drain Current-Single Pulsed 63.2 A PD Total Dissipation @TC=25℃ 130 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.962 ℃/W isc website：www.iscsemi.
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