Datasheet Summary
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
- Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S)
New PW-Mold2
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