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TK28N65W - Silicon N-Channel MOSFET

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK28N65W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain cu.

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Datasheet Details

Part number TK28N65W
Manufacturer Toshiba Semiconductor
File Size 246.50 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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TK28N65W MOSFETs Silicon N-Channel MOS (DTMOS) TK28N65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK28N65W 4.
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