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TK28N65W - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(on) ≤0.13Ω.
  • Enhancement mode: Vth =3 to 4.5 V (VDS = 10 V, ID=1.6mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK28N65W

Datasheet Details

Part number TK28N65W
Manufacturer INCHANGE
File Size 368.08 KB
Description N-Channel MOSFET
Datasheet download datasheet TK28N65W Datasheet
Additional preview pages of the TK28N65W datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK28N65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.13Ω. ·Enhancement mode: Vth =3 to 4.5 V (VDS = 10 V, ID=1.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 27.6 A IDM Drain Current-Single Pulsed 110 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
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