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TK28N65W5 - Silicon N-Channel MOSFET

Features

  • (1) (2) (3) (4) Fast reverse recovery time: trr = 115 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 Start of commercial production 1 2013-09 2014-02-25 Rev.3.0 TK28N65W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics.

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Datasheet Details

Part number TK28N65W5
Manufacturer Toshiba Semiconductor
File Size 249.35 KB
Description Silicon N-Channel MOSFET
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TK28N65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK28N65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 115 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 Start of commercial production 1 2013-09 2014-02-25 Rev.3.0 TK28N65W5 4.
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