Datasheet4U Logo Datasheet4U.com

TK20A60W - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20A60W TO-220SIS 1: Gate 2: Drain 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2013-04 2016-09-08 Rev.7.0 TK20A60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit.

📥 Download Datasheet

Datasheet Details

Part number TK20A60W
Manufacturer Toshiba
File Size 244.51 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK20A60W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK20A60W N-Channel MOSFET INCHANGE
TK20A60W5 N-Channel MOSFET INCHANGE
TK20A60U Silicon N-Channel MOSFET Toshiba
TK20A60U N-Channel MOSFET INCHANGE
TK20A Current Transducer Topstek

Other Datasheets by Toshiba

Part Number Description
TK20A60W5 Silicon N-Channel MOSFET
TK20C60W Silicon N-Channel MOSFET
TK20E60W Silicon N-Channel MOSFET
TK20G60W Silicon N-Channel MOSFET
TK20J60U N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS (DTMOS) TK20A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20A60W TO-220SIS 1: Gate 2: Drain 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2013-04 2016-09-08 Rev.7.0 TK20A60W 4.